At Thermic Edge, we’re proud to introduce our new Atomic Layer Deposition (ALD) System, designed to speed up the mixing of 2D supplies into next-generation semiconductor gadgets, together with high-mobility transistors, reminiscence, and optoelectronics.
Picture Credit score: Thermic Edge Ltd
Our ALD System combines single-chamber ALD and high-temperature annealing, lowering contamination dangers whereas bettering course of effectivity. It helps wafer-scale processing as much as 8 inches, making certain uniform deposition throughout large-area substrates. With superior step protection, it achieves monolayer precision on high-aspect-ratio buildings, and the low-temperature course of ensures compatibility with superior supplies.
Key options embrace a showerhead gasoline supply system for uniform gasoline distribution, SiC3-coated graphite pattern holders and heating parts that permit exact temperature management. Excessive-temperature annealing as much as 1250 °C promotes crystallinity and section transformation, whereas multi-gas compatibility permits oxide, sulfide, and nitride processing in tightly managed environments. Supported gases embrace H2S, H2Se, O2, O3, N2, and Ar.
This method displays our ongoing dedication to offering progressive, high-performance vacuum applied sciences for the semiconductor business.
